Toward the Absolute Spin-Valve Effect in Superconducting Tunnel Junctions

被引:33
作者
De Simoni, Giorgio [1 ,2 ]
Strambini, Elia [1 ,2 ]
Moodera, Jagadeesh S. [3 ,4 ]
Sebastian Bergeret, F. [5 ,6 ]
Giazotto, Francesco [1 ,2 ]
机构
[1] CNR, NEST Ist Nanosci, I-56127 Pisa, Italy
[2] Scuola Normale Super Pisa, I-56127 Pisa, Italy
[3] MIT, Dept Phys, Francis Bitter Magnet Lab, Cambridge, MA 02139 USA
[4] MIT, Plasma Sci & Fus Ctr, 77 Massachusetts Ave, Cambridge, MA 02139 USA
[5] Ctr Mixto CSIC UPV EHU, Ctr Fis Mat CFM MPC, Manuel de Lardizabal 5, E-20018 San Sebastian, Spain
[6] DIPC, Manuel de Lardizabal 4, E-20018 San Sebastian, Spain
关键词
Tunneling magneto-resistance; ferromagnetic insulator; superconductivity; spintronics; magnetic memories; spin valve; MAGNETIC-FIELD; MAGNETORESISTANCE;
D O I
10.1021/acs.nanolett.8b02723
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A superconductor with a spin-split excitation spectrum behaves as an ideal ferromagnetic spin-injector in a tunneling junction. It was theoretically predicted that the combination of two such spin-split superconductors with independently tunable magnetizations may be used as an ideal absolute spin-valve. Here, we report on the first switchable superconducting spin-valve based on two EuS/Al bilayers coupled through an aluminum oxide tunnel barrier. The spin-valve shows a relative resistance change between the parallel and antiparallel configuration of the EuS layers up to 900% that demonstrates a highly spin-polarized current through the junction. Our device may be pivotal for realization of thermoelectric radiation detectors, a logical element for a memory cell in cryogenics, superconductor-based computers, and superconducting spintronics in general.
引用
收藏
页码:6369 / 6374
页数:6
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