Structure transition between two GaAs(001)-c(4 x 4) surface reconstructions in AS4 flux

被引：11

作者：

Arai, T. ^{[1
]}

Suzuki, M. ^{[1
]}

Ueno, Y. ^{[1
]}

Okabayashi, J. ^{[1
]}

Yoshino, J. ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys, Tokyo, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷

关键词：

scanning tunneling microscopy; surface structure; molecular beam epitaxy; GaAs;

D O I：

10.1016/j.jcrysgro.2006.11.249

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have investigated the c(4 x 4) surface reconstructions of GaAs(0 0 1) using scanning tunneling microscopy. We found that, by the As-4 flux in molecular beam epitaxy, the Ga-As dimer (c(4 x 4)alpha) and the As-As dimer (c(4 x 4)beta) structures at the top of the surfaces are distinguished depending on the growth temperature and annealing time. Annealing for more than 2 h at 350 degrees C is required to obtain a stable c(4 x 4)p surface reconstruction dominantly under the As-4 flux conditions. Furthermore, the Ga atoms in the c(4 x 4)alpha Ga-As heterodimers are segregated onto the surface and migrate to the step edges with the step barrier formation by the transition from alpha to beta phases with decreasing annealing temperature. (c) 2006 Published by Elsevier B.V.

引用

页码：22 / 25

页数：4

共 16 条

[1] Reentrant mound formation in GaAs(001) homoepitaxy observed by ex situ atomic force microscopy [J].