High-quality 6 inch (111) 3C-SiC films grown on off-axis (111) Si substrates

被引：57

作者：

Severino, A. ^{[1
]}

Bongiorno, C. ^{[1
]}

Piluso, N. ^{[1
]}

Italia, M. ^{[1
]}

Camarda, M. ^{[1
]}

Mauceri, M. ^{[2
]}

Condorelli, G. ^{[2
]}

Di Stefano, M. A. ^{[3
]}

Cafra, B. ^{[3
]}

La Magna, A. ^{[1
]}

La Via, F. ^{[1
]}

机构：

[1] CNR, IMM, Sez Catania, I-95121 Catania, Italy

[2] Epitaxial Techn Ctr, I-95030 Catania, Italy

[3] ST Microelect, I-95121 Catania, Italy

来源：

THIN SOLID FILMS | 2010年 / 518卷

关键词：

3C-SiC heteroepitaxy; Large area substrates; Defects; Stress evolution; RELAXATION; SI(100); STRESS; LAYERS;

D O I：

10.1016/j.tsf.2009.10.080

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Growth of single crystal 3C-SiC films on large area off-axis (1111) Si substrate by chemical vapour deposition technique is here reported. The growth was conducted on off-axis Si substrates due to the ability of the misorientation to reduce anti-phase disorder in the 3C-SiC film. 3C-SiC films show an extremely flat surface and interface, stimulating further interest for electrical and mechanical device applications even if a very strong bow, due to the strain induced by the growth process, is observed. Film quality was proved to be high by several investigation techniques and a study of the crystalline defects is also presented. Optical profilometer measurements were also conducted to evaluate accurately the asymmetric curvature of the whole system. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：S165 / S169

页数：5

共 16 条

[1] Heteroepitaxy of 3C-SiC on different on-axis oriented silicon substrates [J].