A Harmonic-Boosted V-Band divide-by-3 frequency divider in 65nm CMOS

被引：0

作者：

Cruz, Hugo ^{[1
]}

Chen, Yang-Wen ^{[1
]}

Lu, Yun-Chih ^{[1
]}

Chen, Yi-Jan Emery ^{[1
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Grad Inst Commun Engn, Taipei 106, Taiwan

来源：

2014 IEEE INTERNATIONAL WIRELESS SYMPOSIUM (IWS) | 2014年

关键词：

CMOS; divide-by-three; injection-locked frequency divider (ILFD); locking range; LC-tank; harmonic-boosted;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a low power divide-by-three injection locked frequency divider (ILFD) for the V-band implemented in 65nm CMOS technology. The divider achieves a locking range of 5.5% by using the proposed harmonic-boosting technique. The 71GHz to 75GHz locking range was measured with a maximum input power of 0dBm. The inherent MOSFET non-linearity was exploited to generate the odd-order division ratio of 3. Operating with an input frequency of 75GHz, and 1.2V supply, the divider consumes 2.04mW. The total area including pads is 0.697mmx0.664mm.

引用

页数：4

共 13 条

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