Low threshold voltage and high drive current poly-silicon thin film transistors using Ytterbium metal gate and LaAlO3 dielectric

被引：0

作者：

Hung, B. F. ^{[1
]}

Wu, C. H. ^{[1
]}

Chin, Albert ^{[1
]}

Wang, S. J. ^{[1
]}

Lin, J. W. ^{[1
]}

Hsieh, I. J. ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Eng, Hsinchu, Taiwan

来源：

AD'07: PROCEEDINGS OF ASIA DISPLAY 2007, VOLS 1 AND 2 | 2007年

关键词：

Ytterbium; LaAlO3; UPS; threshold voltage; EOT;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have demonstrated high-performance metal-gate/high-k Ytterbiuni/LaAlO3 low-temperature poly-Si (LTPS) thin film transistors (TFTs) that have both high drive current capability and high voltage operation. The high drive current is due to the combined effect of low work-function Ytterbium metal gate and high gate capacitance by high-k LaAlO3 dielectric. The high breakdown voltage is also due to the high-k LaAlO3 dielectric to give larger physical thickness at the same equivalent oxide thickness (EOT). The good reliability and full process compatibility are the other important merits for Ytterbium/LaAlO3 device.

引用

页码：1190 / 1193

页数：4

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