A 90nm CMOS technology with modular quadruple gate oxides for advanced SoC applications

被引：0

作者：

Mirabedini, MR ^{[1
]}

Gopinath, VP ^{[1
]}

Kamath, A ^{[1
]}

Lee, MY ^{[1
]}

Hsia, WJ ^{[1
]}

Hornback, V ^{[1
]}

Le, Y ^{[1
]}

Badowski, A ^{[1
]}

Baylis, B ^{[1
]}

Li, E ^{[1
]}

Prasad, S ^{[1
]}

Kobozeva, O ^{[1
]}

Haywood, J ^{[1
]}

Catabay, W ^{[1
]}

Yeh, WC ^{[1
]}

机构：

[1] LSI Log Corp, Adv Technol Dev, Milpitas, CA 95035 USA

来源：

41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a 90nm System-on-a-chip (SoC) technology with modular quadruple gate oxides (16, 28, 50, 64 A) on the same chip allowing integration of optimized transistors operating at supply voltages of 1, 1.2, 1.8, 2.5 and 3.3 Volts for different circuit applications. The proposed modular gate oxide process with pre-gate nitrogen implant was shown to be superior to conventional grow-etch-grow approach in terms of gate leakage current, integrity and interface quality of the multiple gate oxides. A high current drive of 1020/390 muA/mum was demonstrated for N/P channel core transistors.

引用

页码：112 / 115

页数：4

共 4 条

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