Heterojunctions of amorphous wide band gap nitrides and silicon

被引：8
|
作者：
Werbowy, A
Szmidt, J
Sokolowska, A
Olszyna, A
机构：
[1] Warsaw Univ Technol, Inst Microelect & Optoelect, PL-00662 Warsaw, Poland
[2] Warsaw Univ Technol, Fac Mat Sci & Engn, PL-02524 Warsaw, Poland
来源：
DIAMOND AND RELATED MATERIALS | 1998年 / 7卷 / 2-5期
关键词：
band structure; doping n-type; doping p-type; nitride;
D O I：
10.1016/S0925-9635(97)00227-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In situ doped nanocrystalline BN, AlN and GaN films were deposited by means of impulse plasma assisted CVD method on silicon substrates. As a result c-BN(n-type)/Si(p-type) as well as AlN(p-type)/Si(n-type) and GaN(p-type)/Si (n-type) heterojunction structures were formed. On the basis of C-V measurements barrier heights of investigated Si/nitride systems were estimated together with work function values phi of boron and aluminum nitrides. Also a hypothetical energy band diagram for obtained AlN/Si heterostructures was proposed. (C) 1998 Elsevier Science S.A.
引用
收藏
页码：397 / 401
页数：5
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