Magneto transport on the surface of a topological insulator spin valve

被引：24
作者：
Soodchomshom, Bumned [1 ,2 ]
机构：
[1] Mahidol Univ, Fac Sci, Dept Phys, Bangkok 10400, Thailand
[2] Commiss Higher Educ, ThEP Ctr, Bangkok 10400, Thailand
来源：
PHYSICS LETTERS A | 2010年 / 374卷 / 28期
关键词：
Topological insulator; Dirac electron; Magnetoresistance; Spintronics; SINGLE DIRAC CONE; PHASE;
D O I：
10.1016/j.physleta.2010.05.021
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The effects of the magnetization on the transport properties of a ferromagnet/barrier/ferromagnet spin valve fabricated with a topological insulator are studied. We consider two types of junctions, (i) an F-1/normal barrier (NB)/F-2 junction and (ii) an F-1/magnetic barrier (FB)/F-2 junction. The junctions in both cases lie in the xy-plane with the magnetizations in both ferromagnetic regions. F-1 and F-2 aligned in the z-direction. The charge carriers in the topological insulator have a Dirac like energy spectrum of a massive relativistic particle with the magnetization M playing the role of the mass. The gap opening is a special magneto feature of topological insulators. In an anti parallel alignment of the two magnetizations, the mass of the carriers is negative in the region where M is in the negative direction. The negative mass leads the behaviors of the magneto transport properties and the tunneling magneto resistance of these junctions to be quite different from those of graphene-based spin values. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：2894 / 2899
页数：6
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