Enhancement in Thermoelectric Properties of Cubic Ge2Sb2Te5 Thin Films by Introducing Structural Disorder

被引：22

作者：

Kumar, Manish ^{[1
]}

Vora-ud, Athorn ^{[1
,2
]}

Seetawan, Tosawat ^{[2
]}

Han, Jeon Geon ^{[1
,3
]}

机构：

[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, NU SKKU Joint Inst Plasma Nano Mat, Ctr Adv Plasma Surface Technol, Suwon 440746, South Korea

[2] Sakon Nakhon Rajabhat Univ, Fac Sci & Technol, Program Phys, Sakon Nakhon 47000, Thailand

[3] Chiang Mai Univ, Fac Engn, Dept Ind Engn, Chiang Mai 50200, Thailand

来源：

ENERGY TECHNOLOGY | 2016年 / 4卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

metal alloys; molecular modeling; Seebeck coefficients; thermoelectrics; thin films; MEMORY;

D O I：

10.1002/ente.201500296

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Thermoelectric performances are usually enhanced by minimizing the thermal conductivity of materials, either by introducing superlattice structures or nanostructuring. Here, a new approach to performance enhancement, based on Seebeck coefficient improvement, is presented for Ge2Sb2Te5 thin films. The electron temperature was controlled by using pulsed direct current (DC) plasma power, and the resulting structural disorder of the cubic crystalline phase enhanced the Seebeck coefficients, as supported by molecular orbital calculations. Our results demonstrate a room-temperature Seebeck coefficient of 190.8VK(-1) for 200nm films deposited on glass.

引用

页码：375 / 379

页数：5

共 16 条

[1] DISCRETE VARIATIONAL X-ALPHA CLUSTER CALCULATIONS .1. APPLICATION TO METAL CLUSTERS [J].