Nitrided gate dielectrics and charge-to-breakdown test

被引：0
作者：
Dimitrijev, S [1 ]
Tanner, P [1 ]
Harrison, HB [1 ]
Sweatman, D [1 ]
机构：
[1] GRIFFITH UNIV,SCH MICROELECT ENGN,NATHAN,QLD 4111,AUSTRALIA
来源：
RAPID THERMAL AND INTEGRATED PROCESSING V | 1996年 / 429卷
关键词：
D O I：
10.1557/PROC-429-239
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：239 / 244
页数：6
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