Transmission electron microscopy and high-resolution electron microscopy studies of structural defects induced in Si single crystals implanted by helium ions at 600 °C

被引：10

作者：

Han, W. T. ^{[1
]}

Liu, H. P. ^{[2
]}

Li, B. S. ^{[2
]}

机构：

[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2018年 / 455卷

关键词：

He implantation; Si; Transmission electron microscopy; Cavities; Frank loops; TRANSIENT ENHANCED DIFFUSION; HE IMPLANTATION; HIGH FLUENCE; SILICON; TEMPERATURE; CAVITIES; DAMAGE; VOIDS; STABILITY; EVOLUTION;

D O I：

10.1016/j.apsusc.2018.05.228

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The implantation-induced defects of crystalline silicon implanted with helium ions to a dose of 5 x 10(16)/cm(2) at 600 degrees C were investigated. The sample was analyzed by transmission electron microscopy and high-resolution electron microscopy. Faceted cavities are observed in the damaged layer. Concurrently the distribution of interstitial-type defect clusters was investigated by conventional electron microscopy in bright and dark field. Many rod-like defects, which belong to {1 1 3}, {1 1 1} and (- 2 0 0), are formed in the end of the projected range. In front of the damaged layer, some ribbon-like defects are formed, which belong to <2 0 0>, ,<1 -1 1> and <1 3 - 3>. The possible reasons of the observed defect clusters are discussed.

引用

页码：433 / 437

页数：5

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