Effects of rapid thermal annealing on properties of HfAlO films directly deposited by ALD on graphene

被引：11
作者：
Zheng, Li [1 ,2 ]
Cheng, Xinhong [1 ]
Cao, Duo [1 ,2 ]
Wang, Zhongjian [1 ]
Xu, Dawei [1 ]
Xia, Chao [1 ,2 ]
Shen, Lingyan [1 ,2 ]
Yu, Yuehui [1 ]
机构：
[1] Chinese Acad Sci, SIMIT, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
MATERIALS LETTERS | 2014年 / 137卷
基金：
中国国家自然科学基金;
关键词：
Dielectrics; Microstructure; Annealing; Graphene; HfAlO films; ATOMIC LAYER DEPOSITION; AL2O3;
D O I：
10.1016/j.matlet.2014.08.146
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work, we investigated the effects of post rapid thermal annealing (RTA) at 800 degrees C on structure and optical properties of HfAlO films directly grown on graphene by atomic layer deposition (ALD). Raman spectra indicated that no defects were introduced into graphene through film growth and RTA process. X-ray photoelectric (XPS) spectra showed that RTA contributed to thermal decomposition of hydroxides. Transmission electron microscopy (TEM) images and grazing incidence X-ray diffraction (GIXRD) patterns indicated that the amorphous morphology stability of HfAIO during the RTA process, and spectroscopic ellipsometry (SE) showed that RTA had few effects on optical properties of HfAlO on graphene. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：200 / 202
页数：3
相关论文
共 18 条
[1]   Optical characterization of HfO2 thin films grown by atomic layer deposition [J].
Aarik, J ;
Mändar, H ;
Kirm, M ;
Pung, L .
THIN SOLID FILMS, 2004, 466 (1-2) :41-47
[2]   Tuning Optical Properties of Al2O3/ZnO Nanolaminates Synthesized by Atomic Layer Deposition [J].
Abou Chaaya, Adib ;
Viter, Roman ;
Baleviciute, Ieva ;
Bechelany, Mikhael ;
Ramanavicius, Arunas ;
Gertnere, Zanda ;
Erts, Donats ;
Smyntyna, Valentyn ;
Miele, Philippe .
JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 118 (07) :3811-3819
[3]   Ultrahigh electron mobility in suspended graphene [J].
Bolotin, K. I. ;
Sikes, K. J. ;
Jiang, Z. ;
Klima, M. ;
Fudenberg, G. ;
Hone, J. ;
Kim, P. ;
Stormer, H. L. .
SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) :351-355
[4]   Evolutionary Kinetics of Graphene Formation on Copper [J].
Celebi, Kemal ;
Cole, Matthew T. ;
Choi, Jong Won ;
Wyczisk, Frederic ;
Legagneux, Pierre ;
Rupesinghe, Nalin ;
Robertson, John ;
Teo, Kenneth B. K. ;
Park, Hyung Gyu .
NANO LETTERS, 2013, 13 (03) :967-974
[5]  
Chae SH, 2013, NAT MATER, V12, P403, DOI [10.1038/NMAT3572, 10.1038/nmat3572]
[6]   Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor [J].
Das, A. ;
Pisana, S. ;
Chakraborty, B. ;
Piscanec, S. ;
Saha, S. K. ;
Waghmare, U. V. ;
Novoselov, K. S. ;
Krishnamurthy, H. R. ;
Geim, A. K. ;
Ferrari, A. C. ;
Sood, A. K. .
NATURE NANOTECHNOLOGY, 2008, 3 (04) :210-215
[7]   Behavior of a chemically doped graphene junction [J].
Farmer, Damon B. ;
Lin, Yu-Ming ;
Afzali-Ardakani, Ali ;
Avouris, Phaedon .
APPLIED PHYSICS LETTERS, 2009, 94 (21)
[8]   Enhanced Transport and Transistor Performance with Oxide Seeded High-κ Gate Dielectrics on Wafer-Scale Epitaxial Graphene [J].
Hollander, Matthew J. ;
LaBella, Michael ;
Hughes, Zachary R. ;
Zhu, Michael ;
Trumbull, Kathleen A. ;
Cavalero, Randal ;
Snyder, David W. ;
Wang, Xiaojun ;
Hwang, Euichul ;
Datta, Suman ;
Robinson, Joshua A. .
NANO LETTERS, 2011, 11 (09) :3601-3607
[9]   Thermal stability of Al- and Zr-doped HfO2 thin films grown by direct current magnetron sputtering [J].
Hong, YE ;
Kim, YS ;
Do, K ;
Lee, D ;
Ko, DH ;
Ku, JH ;
Kim, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2005, 23 (05) :1413-1418
[10]   Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics [J].
Lee, Bongki ;
Park, Seong-Yong ;
Kim, Hyun-Chul ;
Cho, KyeongJae ;
Vogel, Eric M. ;
Kim, Moon J. ;
Wallace, Robert M. ;
Kim, Jiyoung .
APPLIED PHYSICS LETTERS, 2008, 92 (20)
12