Third Order Band Pass Filter With Double-Gate MOSFET: A Circuit Perspective

被引：0

作者：

Naidoo, Danurshan ^{[1
]}

Srivastava, Viranjay M. ^{[1
]}

机构：

[1] Univ KwaZulu Natal, Howard Coll, Dept Elect Engn, ZA-4041 Durban, South Africa

来源：

2021 INTERNATIONAL CONFERENCE ON COMPUTER COMMUNICATION AND INFORMATICS (ICCCI) | 2021年

关键词：

Filter; Band Pass Filter; Double-Gate (DG) MOSFET; Nanotechnology; VLSI;

D O I：

10.1109/ICCCI50826.2021.9402445

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

To achieve the signal of a particular range, a third order Band Pass Filter (BPF) has been realized for the Radio frequency (RF) applications. The mathematical analysis of the designed filter has been performed to determine the overall center frequency and bandwidth. Traditional components such as BJT and MOSFETs have increased power consumption and larger electronic package size. The application of Double-Gate (DG) MOSFET leads to performance and reliability improvement of the filter with a reduction in the device's size. The DG MOSFET has a smaller width and better gate control over the channel than the traditional MOSFET. This DG MOSFET also provides improved power efficiency and switching capabilities for the filter design.

引用

页数：6

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