Orientation-dependent phase switching process and strains of Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3 antiferroelectric thin films

被引：23

作者：

Hao, Xihong ^{[1
,2
]}

Zhai, Jiwei ^{[1
]}

Shang, Fei ^{[1
]}

Zhou, Jing ^{[3
]}

An, Shengli ^{[2
]}

机构：

[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China

[2] Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China

[3] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 11期

基金：

中国国家自然科学基金;

关键词：

antiferroelectric materials; lanthanum compounds; lead compounds; magnetic thin films; magnetic transitions; sol-gel processing; SOL-GEL PROCESS; ELECTRICAL-PROPERTIES; DIELECTRIC-PROPERTIES; FIELD; CERAMICS; FATIGUE;

D O I：

10.1063/1.3407567

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly (100) and (111)-oriented Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O-3 antiferroelectric (AFE) thin films were fabricated through a sol-gel processing. The effects of orientation on phase transformation behaviors and strains of the AFE thin films were studied systemically. As compared to (100)-preferred AFE thin films, the (111)-oriented films showed a smaller forward phase switching field of 250 kV/cm and higher stains of 0.79%. It is therefore concluded that AFE thin films with (111)-preferred orientation are more suitable to be used as microactuators. (c) 2010 American Institute of Physics. [doi:10.1063/1.3407567]

引用

页数：3

共 18 条

[11] Ferroelectric and antiferroelectric films for microelectromechanical systems applications [J].

Xu, BM ;

Cross, LE ;

Bernstein, JJ .

THIN SOLID FILMS, 2000, 377 :712-718

[12] Dielectric properties and field-induced phase switching of lead zirconate titanate stannate antiferroelectric thick films on silicon substrates [J].

Xu, BM ;

Ye, YH ;

Cross, LE .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (05) :2507-2515

[13] Longitudinal and transverse piezoelectric coefficients of lead zirconate titanate/vinylidene fluoride-trifluoroethylene composites with different polarization states [J].

Zeng, R ;

Kwok, KW ;

Chan, HLW ;

Choy, CL .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) :2674-2679

[14] Effect of the orientation on the ferroelectric-antiferroelectric behavior of sol-gel deposited (Pb,Nb)(Zr,Sn,Ti)O3 thin films [J].

Zhai, JW ;

Li, X ;

Chen, HD .

THIN SOLID FILMS, 2004, 446 (02) :200-204

[15] Electric fatigue in Pb(Nb,Zr,Sn,Ti)O3 thin films grown by a sol-gel process [J].

Zhai, JW ;

Chen, HD .

APPLIED PHYSICS LETTERS, 2003, 83 (05) :978-980

[16] Direct current field and temperature dependent behaviors of antiferroelectric to ferroelectric switching in highly (100)-oriented PbZrO3 thin films [J].

Zhai, JW ;

Chen, HD .

APPLIED PHYSICS LETTERS, 2003, 82 (16) :2673-2675

[17] Dielectric properties of oriented PbZrO3 thin films grown by sol-gel process [J].

Zhai, JW ;

Yao, Y ;

Li, X ;

Hung, TF ;

Xu, ZK ;

Chen, H ;

Colla, EV ;

Wu, TB .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (07) :3990-3994

[18] The impact of government's fundings and tax incentives on industrial R&D investments - Empirical evidences from industrial sectors in Shanghai [J].

Zhu, PF ;

Xu, WM ;

Lundin, N .

CHINA ECONOMIC REVIEW, 2006, 17 (01) :51-69

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