Orientation-dependent phase switching process and strains of Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3 antiferroelectric thin films

被引：23
作者：
Hao, Xihong [1 ,2 ]
Zhai, Jiwei [1 ]
Shang, Fei [1 ]
Zhou, Jing [3 ]
An, Shengli [2 ]
机构：
[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
[2] Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China
[3] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 11期
基金：
中国国家自然科学基金;
关键词：
antiferroelectric materials; lanthanum compounds; lead compounds; magnetic thin films; magnetic transitions; sol-gel processing; SOL-GEL PROCESS; ELECTRICAL-PROPERTIES; DIELECTRIC-PROPERTIES; FIELD; CERAMICS; FATIGUE;
D O I：
10.1063/1.3407567
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Highly (100) and (111)-oriented Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O-3 antiferroelectric (AFE) thin films were fabricated through a sol-gel processing. The effects of orientation on phase transformation behaviors and strains of the AFE thin films were studied systemically. As compared to (100)-preferred AFE thin films, the (111)-oriented films showed a smaller forward phase switching field of 250 kV/cm and higher stains of 0.79%. It is therefore concluded that AFE thin films with (111)-preferred orientation are more suitable to be used as microactuators. (c) 2010 American Institute of Physics. [doi:10.1063/1.3407567]
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页数：3
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