A new form of the non-linear compact thermal model of the IGBT

被引：7

作者：

Gorecki, Krzysztof ^{[1
]}

Gorecki, Pawel ^{[1
]}

机构：

[1] Gdynia Maritime Univ, Dept Marine Elect, Gdynia, Poland

来源：

PROCEEDINGS 2018 IEEE 12TH INTERNATIONAL CONFERENCE ON COMPATIBILITY, POWER ELECTRONICS AND POWER ENGINEERING (CPE-POWERENG 2018) | 2018年

关键词：

IGBT; compact thermal model; self-heating; measurements; modelling; POWER; RESISTANCE; SIMULATION; DEVICES;

D O I：

10.1109/CPE.2018.8372563

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper presents a new form of the non-linear compact thermal model of the IGBT. In this model, which has a form of the electrical network, the influence of the internal temperature of this transistor on efficiency of heat dissipation is taken into account. The form of this model is presented, the method of estimation parameters of this model is described and some results of experimental verification of the presented model are shown.

引用

页数：6

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