Reduction in the write error rate of voltage-induced dynamic magnetization switching using the reverse bias method

被引：16

作者：

Ikeura, Takuro ^{[1
,2
]}

Nozaki, Takayuki ^{[1
]}

Shiota, Yoichi ^{[1
,4
]}

Yamamoto, Tatsuya ^{[1
]}

Imamura, Hiroshi ^{[1
]}

Kubota, Hitoshi ^{[1
]}

Fukushima, Akio ^{[1
]}

Suzuki, Yoshishige ^{[1
,3
]}

Yuasa, Shinji ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Spintron Res Ctr, Tsukuba, Ibaraki 3058568, Japan

[2] Univ Tsukuba, Div Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[3] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan

[4] Kyoto Univ, Inst Chem Res, Uji, Kyoto 6110011, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 04期

关键词：

ATOMIC LAYERS; MAGNETISM;

D O I：

10.7567/JJAP.57.040311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using macro-spin modeling, we studied the reduction in the write error rate (WER) of voltage-induced dynamic magnetization switching by enhancing the effective thermal stability of the free layer using a voltage-controlled magnetic anisotropy change. Marked reductions in WER can be achieved by introducing reverse bias voltage pulses both before and after the write pulse. This procedure suppresses the thermal fluctuations of magnetization in the initial and final states. The proposed reverse bias method can offer a new way of improving the writing stability of voltage-driven spintronic devices. (C) 2018 The Japan Society of Applied Physics

引用

页数：4

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