Chemical Solution Route for High-Quality Multiferroic BiFeO3 Thin Films

被引:67
作者
Yang, Bingbing [1 ,2 ]
Jin, Linghua [1 ,2 ]
Wei, Renhuai [1 ]
Tang, Xianwu [1 ]
Hu, Ling [1 ]
Tong, Peng [1 ]
Yang, Jie [1 ]
Song, Wenhai [1 ]
Dai, Jianming [1 ]
Zhu, Xuebin [1 ]
Sun, Yuping [1 ]
Zhang, Shujun [3 ]
Wang, Xiaolin [3 ]
Cheng, Zhenxiang [3 ]
机构
[1] Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
[2] Univ Sci & Technol China, Grad Sch, Sci Isl Branch, Hefei 230026, Anhui, Peoples R China
[3] Univ Wollongong, Australia Inst Innovat Mat, Inst Superconducting & Elect Mat, Innovat Campus,Squires Way, North Wollongong, NSW 2500, Australia
基金
中国国家自然科学基金;
关键词
BiFeO3; chemical solution deposition; dielectrics; epitaxial thin films; ferroelectrics; FERROELECTRIC PROPERTIES; ELECTRICAL-PROPERTIES; ENHANCED POLARIZATION; DOMAIN-STRUCTURE; GRAIN-GROWTH; X-RAY; THICKNESS; BEHAVIOR; LEAKAGE; TRANSITION;
D O I
10.1002/smll.201903663
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Bismuth ferrite (BiFeO3) has recently become interesting as a room-temperature multiferroic material, and a variety of prototype devices have been designed based on its thin films. A low-cost and simple processing technique for large-area and high-quality BiFeO3 thin films that is compatible with current semiconductor technologies is therefore urgently needed. Development of BiFeO3 thin films is summarized with a specific focus on the chemical solution route. By a systematic analysis of the recent progress in chemical-route-derived BiFeO3 thin films, the challenges of these films are highlighted. An all-solution chemical-solution deposition (AS-CSD) for BiFeO3 thin films with different orientation epitaxial on various oxide bottom electrodes is introduced and a comprehensive study of the growth, structure, and ferroelectric properties of these films is provided. A facile low-cost route to prepare large-area high-quality epitaxial BFO thin films with a comprehensive understanding of the film thickness, stoichiometry, crystal orientation, ferroelectric properties, and bottom electrode effects on evolutions of microstructures is provided. This work paves the way for the fabrication of devices based on BiFeO3 thin films.
引用
收藏
页数:19
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