Determination of electrical parameters of ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes in dark and illumination conditions

被引：18

作者：

Gezgin, Serap Yigit ^{[1
]}

Kilic, Hamdi Sukur ^{[1
,2
,3
]}

机构：

[1] Selcuk Univ, Fac Sci, Dept Phys, TR-42031 Selcuklu, Konya, Turkey

[2] Selcuk Univ, Directorate High Technol Res & Applicat Ctr, TR-42031 Selcuklu, Konya, Turkey

[3] Selcuk Univ, Directorate Laser Induced Proton Therapy Applicat, TR-42031 Selcuklu, Konya, Turkey

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2019年 / 51卷 / 11期

关键词：

Diode; CZTS; CdS; PLD; Ideality factor; Efficiency; CDS THIN-FILMS; SOLAR-CELLS; OPTICAL-PROPERTIES; GRAIN-SIZE; MORPHOLOGICAL PROPERTIES; DEPOSITION; TEMPERATURE; EFFICIENCY; SUBSTRATE; CONTACT;

D O I：

10.1007/s11082-019-2079-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes has been produced, CdS and CZTS thin film layers of the diode have been produced on ITO glass at room temperature using PLD technique. It has been produced CZTS thin films that have a polycrystalline structure that were annealed at the sulfurization temperatures of 325 degrees C, 350 degrees C and 375 degrees C when as-grown CZTS thin film has the amorphous structure. CdS thin films have been grown on substrate at room temperature in 15, 20 and 25 min that have polycrystalline structures. Then, CdS thin film deposited for 20 min was annealed at 200 degrees C temperature and, has better crystal structure compared to other thin films. Diodes have been composed of CZTS thin film annealed in 375 degrees C, CdS thin film was grown during 20 min and, then annealed at 200 degrees C temperature. According to J-V characteristics of diode, diodes exhibit some rectification behaviour in dark and show a photo-electric property under illumination conditions. In this article, the ideality factors of diodes in dark condition have been calculated, their electrical parameters of J(sc), V-oc, FF and eta under the illumination condition have been determined and these electrical properties have been discussed in details.

引用

页数：22

共 112 条

[1] CdS thin films formed on flexible plastic substrates by pulsed-laser deposition [J].

Acharya, K. P. ;

Skuza, J. R. ;

Lukaszew, R. A. ;

Liyanage, C. ;

Ullrich, B. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (19)

[2] MoTe2 van der Waals homojunction p-n diode with low resistance metal contacts [J].

Aftab, Sikandar ;

Khan, Muhammad Farooq ;

Gautam, Praveen ;

Noh, Hwayong ;

Eom, Jonghwa .

NANOSCALE, 2019, 11 (19) :9518-9525

[3] Investigation of ZnO:Al window layer of Cu2ZnSnS4 thin film solar cells prepared by non-vacuum processing [J].

Aizawa, Takumi ;

Tanaka, Kunihiko ;

Tagami, Kota ;

Uchiki, Hisao .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 7-8, 2013, 10 (7-8) :1050-1054

[4]

[Anonymous], 2013, J ELECT DEVICES

[5]

[Anonymous], 2018, ARXIV180108498

[6]

[Anonymous], ADV COND MATTER PHYS

[7] Cu2ZnSn(S,Se)4 thin-films prepared from selenized nanocrystals ink [J].

Aruna-Devi, R. ;

Latha, M. ;

Velumani, S. ;

Santos-Cruz, J. ;

Murali, Banavoth ;

Chavez-Carvayar, J. -A. ;

Pulgarin-Agudelo, F. A. ;

Vigil-Galan, O. .

RSC ADVANCES, 2019, 9 (32) :18420-18428

[8]

Bedia F.Z., 2013, INT J MAT SCI, V3, P59

[9] DEPENDENCE OF SERIES RESISTANCE ON OPERATING CURRENT IN P-N-JUNCTION SOLAR-CELLS [J].

BHATTACHARYA, DK ;

MANSINGH, A ;

SWARUP, P .

SOLAR CELLS, 1986, 18 (02) :153-162

[10] The effect of substrate temperature on the properties of nanostructured silicon carbide films deposited by hypersonic plasma particle deposition [J].

Blum, J. ;

Tymiak, N. ;

Neuman, A. ;

Wong, Z. ;

Rao, N. P. ;

Girshick, S. L. ;

Gerberich, W. W. ;

McMurry, P. H. ;

Heberlein, J. V. R. .

JOURNAL OF NANOPARTICLE RESEARCH, 1999, 1 (01) :31-42

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