Post deposition annealing dependent structural and C-V characteristics of (Ta2O5)0.965-(TiO2)0.035 thin films

(Ta2O5)1-x-(TiO2)x (TTO) thin films, with x = 0.035, were deposited onto the P/boron-silicon (100) semiconducting substrates by reactive direct current (DC) magnetron sputtering of mosaic Ta and Ti metal targets, at ambient temperature. As-deposited films have been passed through the process of annealing at the temperatures, ranging from 500 to 800 ?C. X-ray diffraction measurements, generally, show the formation of Ta2O5 structure of the annealed films. Metal?oxide?semiconductor (MOS) structure of Ag/ (Ta2O5)1-x-(TiO2)x/p-Si (Ag/TTO/p-Si), with x = 0.035, was formed, and capacitance of the structure was measured, at room temperature and 1 MHz. Capacitance of prepared MOS structure was measured, and found generally, increasing with annealing temperature. Among the prepared films, maximum value of dielectric constant was found 45, at 1 MHz, for the films annealed at 700 ?C. Frequency dependent behaviour of dielectric loss was observed, and was found minimum value of 0.022, at 200 kHz, for the films deposited at room temperature. ? 2020 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the International Conference on Advances in Materials Processing & Manufacturing Applications.