Extraction of Transmission Line Parameters and Effect of Conductive Substrates on their Characteristics

被引：0
|
作者：
Chaturvedi, Saurabh [1 ]
Bozanic, Mladen [1 ]
Sinha, Saurabh [1 ]
机构：
[1] Univ Johannesburg, Fac Engn & Built Environm, Dept Elect & Elect Engn Sci, Auckland Pk Kingsway Campus, Johannesburg, South Africa
来源：
ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY | 2016年 / 19卷 / 03期
关键词：
Conductive substrate; microstrip line; transmission line (TL) model; S-parameters; skin effect; SiGe BiCMOS; process design kit (PDK); ON-CHIP INTERCONNECTS; CLOSED-FORM EXPRESSIONS;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
The paper presents the effect of conductive or lossy silicon (Si) substrates on the frequency-dependent distributed series impedance transmission line (TL) parameters, R (omega) and L (omega). The frequency variations of these parameters of the microstrip line for four different conductivities of Si substrate are observed and compared. Keysight Technologies (formerly Agilent's Electronic Measurement Group) Advanced Design System is used for the electromagnetic simulations of the microstrip line structures. Scattering parameters based equations are used to plot the variations of series impedance parameters as a function of frequency. Furthermore, this paper explains a complete method to extract various parameters related to a TL. The work extracts the parameters of a microstrip TL model provided with the GlobalFoundries 0.13 mu m SiGe BiCMOS8HP process design kit up to 100 GHz.
引用
收藏
页码：199 / 212
页数：14
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