Enhancement of room temperature ferromagnetism in N-doped TiO2-x rutile: Correlation with the local electronic properties

被引：32
作者：
Drera, G. [1 ]
Mozzati, M. C. [2 ]
Galinetto, P. [2 ]
Diaz-Fernandez, Y. [3 ]
Malavasi, L. [3 ]
Bondino, F. [4 ]
Malvestuto, M. [5 ]
Sangaletti, L. [1 ]
机构：
[1] Univ Cattolica, Dipartimento Matemat & Fis, I-25121 Brescia, Italy
[2] Univ Pavia, Dipartimento Fis A Volta, CNISM, I-27100 Pavia, Italy
[3] Univ Pavia, Dipartimento Chim, I-27100 Pavia, Italy
[4] IOM CNR, Lab TASC, I-34149 Basovizza, Italy
[5] Sincrotrone Trieste, I-34149 Basovizza, Italy
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 01期
关键词：
energy gap; ferromagnetic materials; impurity states; magnetic semiconductors; magnetisation; nitrogen; semiconductor doping; titanium compounds; vacancies (crystal); X-ray photoelectron spectra; OXIDES;
D O I：
10.1063/1.3458699
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The magnetic and electronic properties of ferromagnetic undoped and N-doped TiO2-x rutile have been probed by soft x-ray spectroscopies. Upon N doping, a fivefold enhancement of the saturation magnetization is observed. Apparently, this enhancement is not related to an increase in oxygen vacancies, rather to additional in-gap states, arising from the replacement of O with N atoms in the rutile structure that can provide more favorable conditions for the onset of ferromagnetic ordering. (C) 2010 American Institute of Physics. [doi:10.1063/1.3458699]
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页数：3
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