Experimental and theoretical investigation of LPCVD of Cu using CuI as precursor

In the present paper the behavior of the deposition process of Cu on SiO2 using CuI as copper precursor is investigated theoretically and experimentally. The simulation of the boundary layer now of the CVD-process is based on the assumption of axisymmetric stagnation point flow. In this model the coupling between chemical reactions and heat and mass transport to the heated substrate and in the adjacent flow field is taken into account. The solutions of simulations were compared with different experimental results. The spatial CuI concentration was determined in-situ by the method of Laser-induced fluorescence spectroscopy for several deposition conditions. Characteristics of the deposited copper films, such as thickness, morphology and purity were measured using SEM and EDX. The sheet resistivity was determined by a four-point probe measurement.