Increasing Stability by Two-State Lasing in Quantum Dot Lasers with Optical Injection

被引：3

作者：

Meinecke, Stefan ^{[1
]}

Lingnau, Benjamin ^{[1
]}

Luedge, Kathy ^{[1
,2
]}

机构：

[1] Tech Univ Berlin, Inst Theoret Phys, D-10623 Berlin, Germany

[2] Univ Auckland, Dept Phys, Auckland, New Zealand

来源：

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXV | 2017年 / 10098卷

关键词：

quantum dot laser; two-state lasing; optical injection; BANDWIDTH ENHANCEMENT; SEMICONDUCTOR-LASERS; NONLINEAR DYNAMICS; SUBJECT; ROUTE; CHAOS;

D O I：

10.1117/12.2251791

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A quantum dot (QD) laser capable of two-state lasing in certain parameter regions is studied under external optical injection. Our modeling approach is based on microscopically based rate equations, which include carrier dependent index shifts obtained from a full Bloch-equation approach. Our results show an increase of the dynamical stability of the two-state QD laser under optical perturbations if compared to a single-state QD laser, e.g. to a QD laser with high losses in the excited state. Chaotic dynamics predicted for single-state QD lasers under strong and detuned injection completely vanishes if excited state lasing is possible. This suggests a general trend for semiconductor lasers to yield an improved stability against optical perturbations with more dynamical degrees of freedom.

引用

页数：11

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