Catalyst-Free, III-V Nanowire Photovoltaics

被引：0
|
作者：
Davies, D. G. [1 ]
Lambert, N. [1 ]
Fry, P. W. [2 ]
Foster, A. [1 ]
Krysa, A. B. [2 ]
Wilson, L. R. [1 ]
机构：
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S10 2TN, S Yorkshire, England
[2] Univ Sheffield, Dept Elect & Elect Engn, Natl Ctr III Technol, Sheffield, S Yorkshire, England
来源：
7TH INTERNATIONAL CONFERENCE ON LOW DIMENSIONAL STRUCTURES AND DEVICES (LDSD 2011) | 2014年 / 1598卷
基金：
英国工程与自然科学研究理事会;
关键词：
Catalyst-free; GaAs; Nanowire; Nanopillar; Photovoltaics; p-n junction; GAAS NANOWIRES; FREE GROWTH;
D O I：
10.1063/1.4878301
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on room temperature, photovoltaic operation of catalyst-free GaAs p-i-n junction nanowire arrays. Growth studies were first performed to determine the optimum conditions for controlling the vertical and lateral growth of the nanowires. Following this, devices consisting of axial p-i-n junctions were fabricated by planarising the nanowire arrays with a hard baked polymer. We discuss the photovoltaic properties of this proof-of-concept device, and significant improvements to be made during the growth.
引用
收藏
页码：162 / 165
页数：4
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