A Novel 4H-SiC UMOSFET_ACCUFET with Large Blocking Voltage

被引：4

作者：

Peyvast, Negin ^{[1
]}

Fathipour, Morteza ^{[1
]}

机构：

[1] Univ Tehran, Sch Elect & Comp Engn, Device & Proc Modeling & Simulat Lab, Tehran, Iran

来源：

2009 1ST ASIA SYMPOSIUM ON QUALITY ELECTRONIC DESIGN | 2009年

关键词：

D O I：

10.1109/ASQED.2009.5206303

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

In this paper, a new structure for a power UMOSFET_ACCUFET, based-on 4H-SiC, has been represented. We have demonstrated that by using vertical P and N pillars under the trench of a conventional UMOSFET, a superior characteristic for this device is achieved. The structure may be optimized by appropriate choice of N and P pillar's doping concentrations as well as widths.

引用

页码：35 / 38

页数：4