Enhanced light extraction efficiency of micro-ring array AlGaN deep ultraviolet light-emitting diodes

被引：23

作者：

Fayisa, Gabisa Bekele ^{[1
]}

Lee, Jong Won ^{[1
]}

Kim, Jungsub ^{[2
]}

Kim, Yong-Il ^{[2
]}

Park, Youngsoo ^{[2
]}

Kim, Jong Kyu ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 37673, Gyeongbuk, South Korea

[2] Samsung Elect, LED Business, Adv Dev Team, Yongin 17113, Gyeonggi, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 09期

关键词：

UV LEDS;

D O I：

10.7567/JJAP.56.092101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An effective approach to overcome inherently poor light extraction efficiency of AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) is presented. We demonstrated the 5 x 5 array micro-ring DUV LED having an inclined sidewall at the outer perimeter and a p-GaN-removed inner circle of the micro-ring, together with MgF2/Al omnidirectional reflectors. The micro-ring array DUV LED shows remarkably higher light output power by 70% than the reference, consistent with the calculated result, as well as comparable turn-on and operational voltages, which are attributed to the effective extraction of strong transverse-magnetic polarized anisotropic emission and the reduction of the absorption loss by the p-GaN contact layer, simultaneously. (C) 2017 The Japan Society of Applied Physics

引用

页数：4

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