Simulation of performance characteristics of GaInNAs vertical-cavity surface-emitting lasers

被引：2
作者：
Sarzala, RP
Makowiak, P
Wasiak, M
Czyszanowski, T
Nakwaski, W
机构：
[1] Tech Univ Lodz, Inst Phys, PL-93005 Lodz, Poland
[2] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
来源：
IEE PROCEEDINGS-OPTOELECTRONICS | 2003年 / 150卷 / 01期
关键词：
D O I：
10.1049/ip-opt:20030041
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An advanced three-dimensional fully self-consistent optical/electrical/thermal/gain model of a 1.3 mum (Galn)(NAs)/GaAs vertical-cavity surface-emitting laser (VCSEL) has been applied to simulate its room-temperature (RT) continuous-wave (CW) performance characteristics and to enable its structure optimisation. Localisation of the AlxOy aperture has been found to have a decisive impact on the device RT CW lasing threshold. Orders of excited transverse modes have been discovered to be dramatically reduced (and device mode selectivity considerably improved) with a decrease in the lateral size of the laser active region. Hence, RT CW single-fundamental-mode operation becomes possible in small-active-region GaInNAs VCSELs.
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收藏
页码：83 / 85
页数：3
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