Removal of NF3 from semiconductor-process flue gases by tandem packed-bed plasma and adsorbent hybrid systems

被引：78

作者：

Chang, JS ^{[1
]}

Kostov, KG

Urashima, K

Yamamoto, T

Okayasu, Y

Kato, T

Iwaizumi, T

Yoshimura, K

机构：

[1] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4M1, Canada

[2] Univ Osaka Prefecture, Dept Energy Syst Engn, Osaka 599, Japan

[3] EBARA Co, Tokyo 1088480, Japan

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 2000年 / 36卷 / 05期

关键词：

adsorbent; CaCO3; cleaning process; flue gas; NF3; packed bed; plasma; semiconductor;

D O I：

10.1109/28.871272

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A tandem hybrid gas cleanup system, consisting of a BaTiO3 packed-bed plasma reactor and a CaCO3 adsorbent filter, was used to study the removal of NF3 from semiconductor-process flue gases. Plasma-chemical kinetics of N-2-NF3-O-2-H-2 gas mixtures suggested byproducts observed in the experiments. The laboratory-scale system showed NF3 removal at atmospheric pressure. Typically, 100% NF3 abatement was achieved with an inlet concentration of 5000 ppm and a gas residence time in the reactor less than 10 s.

引用

页码：1251 / 1259

页数：9

共 18 条

[1] CORONA DISCHARGE PROCESSES
CHANG, JS
LAWLESS, PA
YAMAMOTO, T
[J]. IEEE TRANSACTIONS ON PLASMA SCIENCE, 1991, 19 (06) : 1152 - 1166
[2] REACTIONS FORMING ELECTRONICALLY-EXCITED FREE-RADICALS .2. FORMATION OF N4S, N2D AND N2P ATOMS IN THE H + NF2 REACTION, AND N-ATOM REACTIONS
CHEAH, CT
CLYNE, MAA
[J]. JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS II, 1980, 76 : 1543 - 1560
[3] CHEAH CT, 1981, J PHOTOCHEM, V15, P21
[4] REACTIONS FORMING ELECTRONICALLY-EXCITED FREE-RADICALS .1. GROUND-STATE REACTIONS INVOLVING NF2 AND NF RADICALS
CHEAH, CT
CLYNE, MAA
WHITEFIELD, PD
[J]. JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS II, 1980, 76 : 711 - 728
[5] Electronic energy transfer processes in fluorine-containing radicals: Singlet NF
Clyne, M. A. A.
White, I. F.
[J]. CHEMICAL PHYSICS LETTERS, 1970, 6 (05) : 465 - 467
[6] CRIP JD, 1995, NIST WORKSH POLL CON
[7] ANISOTROPIC ETCHING OF SIO2 IN LOW-FREQUENCY CF4/O2 AND NF3/AR PLASMAS
DONNELLY, VM
FLAMM, DL
DAUTREMONTSMITH, WC
WERDER, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (01) : 242 - 252
[8] FREBIG M, 1995, NIST WORKSH POLL CON
[9] KINETIC PROCESSES OF NF3 ETCHANT GAS-DISCHARGES
GREENBERG, KE
VERDEYEN, JT
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (05) : 1596 - 1601
[10] HUXLEY LGH, 1974, DIFFUSIOON DRIFT ELE

← 1 2 →