Vacuum electron field emission from SnO2 nanowhiskers synthesized by thermal evaporation

被引：58
|
作者：
Luo, SH [1 ]
Wan, Q
Liu, WL
Zhang, M
Di, ZF
Wang, SY
Song, ZT
Lin, CL
Dai, JY
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr Semicond Funct Film Engn Technol, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[3] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
来源：
NANOTECHNOLOGY | 2004年 / 15卷 / 11期
关键词：
D O I：
10.1088/0957-4484/15/11/006
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Rod-shaped and wire-shaped SnO2 nanowhiskers were synthesized by thermal evaporating of tin powders at 900degreesC. Three Raman peaks (474, 632, 774 cm(-1)) showed the typical feature of the rutile phase of as-synthesized SnO2 nanowhiskers, which was consistent with the result of x-ray diffraction. A relatively low turn-on field of 1.37 V mun(-1) at a current density of 0.1 muA cm(-2) was obtained. The dependence of emission current density on the electric field followed a Fowler-Nordheim relationship. Our results indicated that SnO2 nanowhiskers had an interesting FE property as a wide band gap semiconductor.
引用
收藏
页码：1424 / 1427
页数：4
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