atomic layer deposition;
dielectric materials;
germanium compounds;
MOS capacitors;
secondary ion mass spectroscopy;
substrates;
zirconium compounds;
DIELECTRICS;
INTERFACE;
OXIDES;
D O I:
10.1063/1.3295698
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
ZrO2/GeO2 dielectrics are grown on germanium substrates by Atomic Layer Deposition (ALD) at substrate temperatures of 150, 200, and 250 degrees C, respectively. The impact of the deposition temperature on the electrical and structural properties of MOS capacitors is investigated. A significant influence of the ALD temperature on the high frequency capacitance in inversion can be observed, resulting in a shift of the minority carrier response time from 1.15 to 0.2 mu s. Time-of-flight secondary ion mass spectroscopy investigations indicate a distinctive depletion of interfacial GeO at higher ALD temperatures, which give rise to trap levels near the oxide/Ge interface.