Suppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle

被引：6

作者：

Masumoto, Keiko ^{[1
,2
]}

Asamizu, Hirokuni ^{[1
,3
]}

Tamura, Kentaro ^{[1
,3
]}

Kudou, Chiaki ^{[1
,4
]}

Nishio, Johji ^{[1
,5
]}

Kojima, Kazutoshi ^{[1
,2
]}

Ohno, Toshiyuki ^{[1
,6
]}

Okumura, Hajime ^{[1
,2
]}

机构：

[1] R&D Partnership Future Power Elect Technol, Tsukuba, Ibaraki 3058569, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[3] ROHM Co Ltd, Ukyo Ku, Kyoto 6158585, Japan

[4] Panasonic Corp, Uozu, Toyama 9378585, Japan

[5] Toshiba Co Ltd, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan

[6] Hitachi Ltd, Kokubunji, Tokyo 1858601, Japan

来源：

MATERIALS | 2014年 / 7卷 / 10期

关键词：

silicon carbide; epitaxial growth; low off-angle; 3C inclusion; in situ etching; C/Si ratio; CHEMICAL-VAPOR-DEPOSITION; EPITAXIAL-GROWTH; ON-AXIS; 2-DEGREES; SUBSTRATE; SURFACES; ADATOMS; WAFERS; FILMS; CVD;

D O I：

10.3390/ma7107010

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We grew epitaxial layers on 4H-silicon carbide (SiC) Si-face substrates with a 1 degrees off-angle. The suppression of 3C-inclusion formation during growth at a high C/Si ratio was investigated, because a growth technique with a high C/Si ratio is needed to decrease residual nitrogen incorporation. 3C inclusions were generated both at the interface between the substrate and epitaxial layer, and during epitaxial growth. 3C-SiC nucleation is proposed to trigger the formation of 3C inclusions. We suppressed 3C-inclusion formation by performing deep in situ etching and using a high C/Si ratio, which removed substrate surface damage and improved the 4H-SiC stability, respectively. The as-grown epitaxial layers had rough surfaces because of step bunching due to the deep in situ etching, but the rough surface became smooth after chemical mechanical polishing treatment. These techniques allow the growth of epitaxial layers with 1 degrees off-angles for a wide range of doping concentrations.

引用

页码：7010 / 7021

页数：12

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