Fully 3-D Integrated Pixel Detectors for X-Rays

被引:20
作者
Deptuch, Grzegorz W. [1 ,2 ]
Carini, Gabriella [3 ]
Enquist, Paul [4 ]
Grybos, Pawel [2 ]
Holm, Scott [1 ]
Lipton, Ronald [1 ]
Maj, Piotr [2 ]
Patti, Robert [5 ]
Siddons, David Peter [6 ]
Szczygiel, Robert [2 ]
Yarema, Raymond [1 ]
机构
[1] Fermilab Natl Accelerator Lab, Particle Phys Div, Dept Elect Engn, ASIC Dev Grp, Batavia, IL 60510 USA
[2] AGH Univ Sci & Technol, Dept Measurement & Elect, Fac Elect Engn Automat Comp Sci & Biomed Engn, PL-30059 Krakow, Poland
[3] SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA
[4] Ziptronix Inc, Raleigh, NC 27612 USA
[5] Tezzaron Semicond, Naperville, IL 60563 USA
[6] Brookhaven Natl Lab, Photon Sci Directorate, Upton, NY 11973 USA
关键词
CMOS integrated circuits; 3D integration; image sensors; pixel detectors; X-ray detectors; CIRCUITS; SENSORS; TESTS; CHIP;
D O I
10.1109/TED.2015.2448671
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The vertically integrated photon imaging chip (VIPIC1) pixel detector is a stack consisting of a 500-mu m-thick silicon sensor, a two-tier 34-mu m-thick integrated circuit, and a host printed circuit board (PCB). The integrated circuit tiers were bonded using the direct bonding technology with copper, and each tier features 1-mu m-diameter through-silicon vias that were used for connections to the sensor on one side, and to the host PCB on the other side. The 80-mu m-pixel-pitch sensor was the direct bonding technology with nickel bonded to the integrated circuit. The stack was mounted on the board using Sn-Pb balls placed on a 320-mu m pitch, yielding an entirely wire-bond-less structure. The analog front-end features a pulse response peaking at below 250 ns, and the power consumption per pixel is 25 mu W. A successful completion of the 3-D integration is reported. In addition, all pixels in the matrix of 64 x 64 pixels were responding on well-bonded devices. Correct operation of the sparsified readout, allowing a single 153-ns bunch timing resolution, was confirmed in the tests on a synchrotron beam of 10-keV X-rays. An equivalent noise charge of 36.2 e(-) rms and a conversion gain of 69.5 mu V/e(-) with 2.6 e(-) rms and 2.7 mu V/e(-) rms pixel-to-pixel variations, respectively, were measured.
引用
收藏
页码:205 / 214
页数:10
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