Scaling of resistance and electron mean free path of single-walled carbon nanotubes

被引:254
作者
Purewal, Meninder S. [1 ]
Hong, Byung Hee
Ravi, Anirudhh
Chandra, Bhupesh
Hone, James
Kim, Philip
机构
[1] Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA
[2] Columbia Univ, Dept Phys, New York, NY 10027 USA
[3] Columbia Univ, Dept Mech Engn, New York, NY 10027 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevLett.98.186808
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present an experimental investigation on the scaling of resistance in individual single-walled carbon nanotube devices with channel lengths that vary 4 orders of magnitude on the same sample. The electron mean free path is obtained from the linear scaling of resistance with length at various temperatures. The low temperature mean free path is determined by impurity scattering, while at high temperature, the mean free path decreases with increasing temperature, indicating that it is limited by electron-phonon scattering. An unusually long mean free path at room temperature has been experimentally confirmed. Exponentially increasing resistance with length at extremely long length scales suggests anomalous localization effects.
引用
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页数:4
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