Effect of ozone radical treatment for high-performance poly-Si TFTs

被引：0

作者：

Hirata, Tatsuaki ^{[1
]}

Kuroki, Shin-Ichiro ^{[1
]}

Yamano, Masayuki ^{[1
]}

Sato, Tadashi ^{[1
]}

Kotani, Koji ^{[2
]}

Kikkawa, Takamaro ^{[1
]}

机构：

[1] Hiroshima Univ RNBS, Res Inst Nanodevice & Bio Syst, 1-4-2 Kagamiyama, Hiroshima 7398527, Japan

[2] Tohoku Univ, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

2014 21ST INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD) | 2014年

关键词：

HEAT-TREATMENT; THIN-FILMS; LASER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-perfomance low-temperature poly-Si thin film transistor (LTPS-TFT) with one-dimensionally elongated long crystal grains have been developed. In the LIPS TFTs, the carrier mobility is enhanced, however the off-leakage current also increase. This is because, grain boundary become longer, and bridge the distance between source and drain, and the grain boundary bridge become a current-leakage path. In this paper, we suggest a novel ozone radical treatment for reducing the off-leakage current.

引用

页码：189 / 192

页数：4

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