Palladium thin film contacts on p-type ZnSe: adjustment of electrical properties by reaction diffusion

被引：0

作者：

Goesmann, F ^{[1
]}

Studnitzky, T ^{[1
]}

Schmid-Fetzer, R ^{[1
]}

Pisch, A ^{[1
]}

机构：

[1] Tech Univ Clausthal, AG Elekt Mat, D-38678 Clausthal Zellerfeld, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷

关键词：

ZnSe; electrical contacts; palladium; phase equilibria;

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The ternary system Pd-Zn-Se was investigated at 340 degrees C. A complete isothermal phase diagram is given, containing a newly discovered ternary phase tau(2) of approximate composition Pd62Zn32Se, The reaction diffusion between Pd and ZnSe was investigated at 340 degrees C and the diffusion path is described. Thin film palladium contacts were annealed at 250 degrees C for 1-30 min. Lowest contact resistivities were reproducibly obtained after 2 min annealing. The results are related to the study of the ternary Pd-Zn-Se phase equilibria and Pd/ZnSe bulk reaction diffusion. A complex contact metallurgy is responsible for the attainment of good ohmic contact properties. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：406 / 410

页数：5