Frequency response of AlN-based solidly mounted resonators under mechanical stress

被引：3

作者：

Clement, M. ^{[1
]}

Delicado, A. ^{[1
]}

Olivares, J. ^{[1
]}

Mirea, T. ^{[1
]}

Sangrador, J. ^{[1
]}

Iborra, E. ^{[1
]}

机构：

[1] Univ Politecn Madrid, GMME CEMDATIC ETSIT, Madrid, Spain

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2017年 / 258卷

关键词：

AlN resonator; Mechanical strain; Frequency variation; PRESSURE SENSORS; WAVE;

D O I：

10.1016/j.sna.2017.02.028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We analyse the performance of solidly mounted bulk acoustic wave resonators under induced mechanical stress to explore their viability as strain sensors. The resonators are made of polycrystalline AIN piezoelectric thin films containing uniformly tilted microcrystals to excite both longitudinal and shear modes. The resonators are grown on top of silicon bars that are fixed at one or two edges using two home-made apparatus specifically designed to induce deformations of several hundreds of microstrains. The induced strain causes frequency shifts of tenths of MHz, yielding strain coefficients of the resonant frequency (SCI) up to 71% per unit strain (-0.71 ppmhle). The influence of the nature of the resonant mode (shear of longitudinal), the electromechanical coupling factor and the operation frequency on the SCF is analysed. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：39 / 43

页数：5

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