Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO2

被引：17

作者：

Kanazawa, Toru ^{[1
]}

Amemiya, Tomohiro ^{[1
]}

Upadhyaya, Vikrant ^{[1
]}

Ishikawa, Atsushi ^{[2
]}

Tsuruta, Kenji ^{[2
]}

Tanaka, Takuo ^{[3
]}

Miyamoto, Yasuyuki ^{[1
]}

机构：

[1] Tokyo Inst Technol, Meguro 1528552, Japan

[2] Okayama Univ, Okayama 7008530, Japan

[3] RIKEN, Wako, Saitama 3510918, Japan

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2017年 / 16卷 / 04期

基金：

日本学术振兴会;

关键词：

MOSFETs; transition metal dichalcogenides; hafnium disulfide; atomic layer deposition; FIELD-EFFECT TRANSISTORS; MOS2; OXIDATION; MOBILITY;

D O I：

10.1109/TNANO.2017.2661403

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hafnium disulfide (HfS2) is one of the transition metal dichalcogenides which is expected to have the high electron mobility and the finite bandgap. However, the fabrication process for HfS2 = based electron devices is not established, and it is required to bring out the superior transport properties of HfS2. In this report, we have investigated the effects of the atomic layer deposited HfO2 passivation on the current properties of HfS2 transistors. HfO2 passivation of the HfS2 surface enhanced the drain current and significantly reduced the hysteresis. Moreover, HfO2 passivation allows the use of a higher annealing temperature and further improvement of the drain current.

引用

页码：582 / 587

页数：6

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