A Phase Change Material Integrated Press Pack Power Module With Enhanced Overcurrent Capability for Grid Support-A Study on FRD

被引：16

作者：

Ren, Hai ^{[1
]}

Shao, Weihua ^{[1
,2
]}

Ran, Li ^{[1
,3
]}

Hao, Gaofeng ^{[1
]}

Zhou, Lin ^{[1
]}

Mawby, Philip ^{[3
]}

Jiang, Huaping ^{[1
]}

机构：

[1] Chongqing Univ, State Key Lab Power Transmiss Equipment & Syst Se, Chongqing 400044, Peoples R China

[2] Nanjing Inst Technol, Nanjing 211167, Peoples R China

[3] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 2021年 / 57卷 / 04期

基金：

英国工程与自然科学研究理事会;

关键词：

Phase change materials; Heating systems; Presses; Power conversion; Molybdenum; Insulated gate bipolar transistors; Circuit faults; Fast recovery diode (FRD); grid support; overcurrent; phase change material (PCM); power semiconductor; press pack power module; thermal management; voltage source converter-high voltage direct current (VSC-HVdc); THERMAL-ENERGY STORAGE; HVDC;

D O I：

10.1109/TIA.2021.3069721

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The capability of dynamic grid support of a voltage source converter-high voltage direct current (VSC-HVdc) system depends on the maximum allowable current of the converter. This study attempts to increase the capability by overloading the power semiconductor device for a short period of time. Keeping the device temperature low is a major challenge due to the extra loss and small local thermal capacity. This study investigates a solution to increase the transient thermal capacity by making use of the latent heat of a phase change material (PCM). This article presents an integration scheme for a press pack power module, focusing on the fast recovery diode in an IGBT-diode package. Experiment and finite element analysis are used to evaluate the concept and analyze the factors affecting the design. It is shown that as heat is absorbed by the integrated PCM, the device temperature rise during a power surge is effectively tempered, providing a high short-term overcurrent rating of the device and an increased dynamic grid support capability of the VSC-HVdc system.

引用

页码：3956 / 3968

页数：13

共 31 条

[1]

Altin M., 2010, P INT CONF OPTIM EL, P1152

[2] Junction Temperature Control for More Reliable Power Electronics [J].

Andresen, Markus ;

Ma, Ke ;

Buticchi, Giampaolo ;

Falck, Johannes ;

Blaabjerg, Frede ;

Liserre, Marco .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2018, 33 (01) :765-776

[3]

[Anonymous], PS 154 & PS 185 Heatsink

[4]

[Anonymous], 2015, APPL MANUAL POWER SE

[5]

[Anonymous], 1998, 6003411998 BS EN 6003411998 BS EN

[6]

Antonetti V. W., 1993, Transactions of the ASME. Journal of Electronic Packaging, V115, P131, DOI 10.1115/1.2909293

[7]

Aydin B., 2014, IGBT PRESS PACKS IND

[8]

Bonner R. W., 2011, P IEEE SEMICOND THER, P193

[9] LOSSES IN PWM INVERTERS USING IGBTS [J].

CASANELLAS, F .

IEE PROCEEDINGS-ELECTRIC POWER APPLICATIONS, 1994, 141 (05) :235-239

[10]

Choy W. J., 2011, P 14 EUR C POW EL AP P 14 EUR C POW EL AP, P1

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