Short-Channel Graphene Mixer With High Linearity

被引：20

作者：

Gao, Qingguo ^{[1
,2
]}

Li, Xuefei ^{[1
,2
]}

Tian, Mengchuan ^{[1
,2
]}

Xiong, Xiong ^{[1
,2
]}

Zhang, Zhenfeng ^{[1
,2
]}

Wu, Yanqing ^{[1
,2
]}

机构：

[1] Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Wuhan 430074, Hubei, Peoples R China

[2] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Graphene; field effect transistors; mixer; linearity; IIP3; HIGH-FREQUENCY; INTEGRATED MIXER; TRANSISTORS;

D O I：

10.1109/LED.2017.2718732

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Frequency mixers based on short channel transistors using single crystal chemical vapor deposited graphene were fabricated and the linearity of these mixers were fully characterized. The linearity increases with decreasing gate length while the input third-order intercept point is independent on local oscillation (LO) power for the short channel 100-nm transistors. 20-dBm 1-dB compression point (CP1dB) and 29-dBm third-order intercept point can be achieved for the 100-nm-gate-length graphenemixer at 15-dBm LO Power. The excellent linearity of the short channel graphene mixers shows potential for applications in high-quality radio frequency front ends.

引用

页码：1168 / 1171

页数：4

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