Sol-gel production of Cu/Al co-doped zinc oxide: Effect of Al co-doping concentration on its structure and optoelectronic properties

被引:9
作者
Bu, Ian Yi-Yu [1 ]
机构
[1] Natl Kaohsiung Marine Univ, Dept Microelect Engn, Kaohsiung 632, Taiwan
关键词
Zinc oxide; Sol-gel; Copper; Aluminium; Co-doping; ZNO THIN-FILMS; ROOM-TEMPERATURE FERROMAGNETISM; OPTICAL-PROPERTIES; TRANSPARENT; COPPER; NANOPARTICLES; DEPOSITION; GALLIUM; GROWTH;
D O I
10.1016/j.spmi.2014.09.011
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Sol-gel deposition of ZnO:Cu:Al thin films were co-doped different Cu:Al ratio. The optoelectronic and structural properties of the resultant film were evaluated using scanning electron microscopy, X-ray diffraction, energy dispersive spectroscopy, photoluminescence spectroscopy and UV-VIS spectroscopy. It was found that the Al content leads to narrowing of the band gap and that excessive Al doping concentration greater than 5 at% degrade the film's properties. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:115 / 124
页数:10
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