Control of InAs self-assembled islands on GaAs vicinal surfaces by annealing in gas-source molecular beam epitaxy

Growth of InAs/GaAs self-assembled quantum dots (SADs) on GaAs vicinal surfaces was studied by gas source molecular beam epitaxy. Low island density was obtained after 1.8 monolayer InAs supply by increasing the annealing time at the growth temperature. The remaining three-dimensional islands kept the "lens-shape" with the height of about 11.8 nm but the average diameter increased by a few percent around 40 nm. 77 K photoluminescence of the SADs with increasing growth interruption time before being capped by GaAs showed red-shift of the distinct peaks from the sub-band levels of the quantum dots which agrees to the slight increase of their lateral sizes. Large reduction of the dot density was obtained by 80s growth interruption.