Surface Phase Metastability during Langmuir Evaporation

被引：3

作者：

Hannikainen, K. ^{[1
]}

Gomez, D. ^{[1
]}

Pereiro, J. ^{[1
]}

Niu, Y. R. ^{[1
]}

Jesson, D. E. ^{[1
]}

机构：

[1] Cardiff Univ, Sch Phys & Astron, Cardiff CF24 3AA, S Glam, Wales

来源：

PHYSICAL REVIEW LETTERS | 2019年 / 123卷 / 18期

基金：

英国工程与自然科学研究理事会; 欧盟地平线“2020”;

关键词：

GALLIUM; RECONSTRUCTIONS; VAPORIZATION; MECHANISM; DROPLETS; GAAS;

D O I：

10.1103/PhysRevLett.123.186102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have directly imaged the spontaneous formation of metastable surface phase domains on GaAs(001) during Langmuir evaporation. Eventually, these metastable phases transform to the thermodynamically stable parent phase, producing a dynamic phase coexistence with a temperature dependent, time-averaged coverage. Monte Carlo simulations arc used to identify the key kinetic processes and investigate the interplay between phase metastability and evolving surface morphology. This is used to explain the measured temperature dependence of the time-averaged coverage.

引用

页数：5

共 30 条

[1] Quantum dot opto-electronic devices [J].

Bhattacharya, P ;

Ghosh, S ;

Stiff-Roberts, AD .

ANNUAL REVIEW OF MATERIALS RESEARCH, 2004, 34 :1-40

[2] CONGRUENT VAPORIZATION OF GAAS(S) AND STABILITY OF GA(L) DROPLETS AT THE GAAS(S) SURFACE [J].

CHATILLON, C ;

CHATAIN, D .

JOURNAL OF CRYSTAL GROWTH, 1995, 151 (1-2) :91-101

[3] Multiphase transformation and Ostwald's rule of stages during crystallization of a metal phosphate [J].

Chung, Sung-Yoon ;

Kim, Young-Min ;

Kim, Jin-Gyu ;

Kim, Youn-Joong .

NATURE PHYSICS, 2009, 5 (01) :68-73

[4] EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE [J].

FOXON, CT ;

HARVEY, JA ;

JOYCE, BA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) :1693-&

[5] LANGMUIR EVAPORATION FROM (100), (111A), AND (111B) FACES OF GAAS [J].

GOLDSTEIN, B ;

SZOSTAK, DJ ;

BAN, VS .

SURFACE SCIENCE, 1976, 57 (02) :733-740

[6] Phase coexistence during surface phase transitions [J].

Hannon, JB ;

Heringdorf, FJMZ ;

Tersoff, J ;

Tromp, RM .

PHYSICAL REVIEW LETTERS, 2001, 86 (21) :4871-4874

[7] Limit of validity of Ostwald's rule of stages in a statistical mechanical model of crystallization [J].

Hedges, Lester O. ;

Whitelam, Stephen .

JOURNAL OF CHEMICAL PHYSICS, 2011, 135 (16)

[8] Ordering of the Nanoscale Step Morphology As a Mechanism for Droplet Self-Propulsion [J].

Hilner, Emelie ;

Zakharov, Alexei A. ;

Schulte, Karina ;

Kratzer, Peter ;

Andersen, Jesper N. ;

Lundgren, Edvin ;

Mikkelsen, Anders .

NANO LETTERS, 2009, 9 (07) :2710-2714

[9] Investigation on GaAs(001) surface treated by As-free high temperature surface cleaning method [J].

Isomura, N. ;

Tsukamoto, S. ;

Iizuka, K. ;

Arakawa, Y. .

JOURNAL OF CRYSTAL GROWTH, 2007, 301 :26-29

[10]

Jesson D. E., 2010, MICROSCOPY

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