Sn2+ and Cu2+ Self-Codoped Cu2ZnSnS4 Nanosheets Switching from p-Type to n-Type Semiconductors for Visible-Light-Driven CO2 Reduction

被引:17
作者
Chai, Yao [1 ]
Chen, Yanmei [1 ]
Wang, Bing [1 ]
Jiang, Jianing [1 ]
Liu, Yongzhi [1 ]
Shen, Jinni [1 ]
Wang, Xuxu [1 ]
Zhang, Zizhong [1 ,2 ]
机构
[1] Fuzhou Univ, Coll Chem, State Key Lab Photocatalysis Energy & Environm, Fuzhou 350116, Peoples R China
[2] Fuzhou Univ, Qingyuan Innovat Lab, Quanzhou 362801, Peoples R China
基金
中国国家自然科学基金;
关键词
KEYWORDS; Cu; 2; ZnSnS; 4; Photocatalysis; Self-codoping; Energy level engineering; CO; reduction; SOLID-SOLUTION; PHOTOREDUCTION; PHOTOCATALYST; NANOPARTICLES; COCATALYST;
D O I
10.1021/acssuschemeng.2c01564
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
ABSTRACT: Energy level engineering is a powerful technique to tune the electron transport and the photocatalytic properties of photocatalysts with low-valence Sn2+ and high-valence Cu2+ selfcodoping by solvothermal method. The band gap energy level and Fermi level of Cu2ZnSnS4 nanosheets can be adjusted by controlling Sn2+ and Cu2+ self-codoping at different solvothermal temperature. This leads to semiconductor behavior change from p-type of the intrinsic Cu2ZnSnS4 to the n-type of self-codoped sample. The n-type Cu2ZnSnS4 nanosheets exhibit a good CO2 photoreduction performance to yield 48.14 and 25.04 mu mol g-1 h-1 of CO and CH4, where CO yields on n-type Cu2ZnSnS4 is about 4 times higher than that on the intrinsic Cu2ZnSnS4. This work offers a versatile approach of different valence metal ion self-codoping to engineer the energy level of multimetal semiconductor photocatalyst.
引用
收藏
页码:8825 / 8834
页数:10
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