Spontaneous formation of core-shell GaAsP nanowires and their enhanced electrical conductivity

被引：19

作者：

Sun, Wen ^{[1
]}

Huang, Yang ^{[1
]}

Guo, Yanan ^{[1
,2
]}

Liao, Zhi Ming ^{[1
]}

Gao, Qiang ^{[2
]}

Tan, Hark Hoe ^{[2
]}

Jagadish, Chennupati ^{[2
]}

Liao, Xiao Zhou ^{[3
]}

Zou, Jin ^{[1
,4
]}

机构：

[1] Univ Queensland, St Lucia, Qld 4072, Australia

[2] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys & Engn, Canberra, ACT 0200, Australia

[3] Univ Sydney, Sch Aerosp Mech & Mechatron Engn, Sydney, NSW 2006, Australia

[4] Univ Queensland, Ctr Microscopy & Microanal, St Lucia, Qld 4072, Australia

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2015年 / 3卷 / 08期

基金：

澳大利亚研究理事会;

关键词：

CHEMICAL-VAPOR-DEPOSITION; FIELD-EMISSION PROPERTIES; MOLECULAR-BEAM EPITAXY; MULTISHELL NANOWIRE; INGAAS NANOWIRES; TWIN-FREE; GROWTH; HETEROSTRUCTURES; MECHANISM; KINETICS;

D O I：

10.1039/c4tc02305f

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, we report the growth of core-shell GaAsP nanowires using metal-organic chemical vapor deposition. The grown core-shell nanowires were examined by detailed electron microscopy, revealing that the P concentration in the nanowire cores is higher than that in the shells. Au catalysts enhanced the local decomposition of PH3, leading to relevant high P incorporation in the nanowire cores during nanowire growth. These core-shell GaAsP nanowires exhibit enhanced electrical conductivity when compared with uniform GaAsP nanowires. This study provides an approach to enhance the electrical conductivity of III-V semiconductor nanowires.

引用

页码：1745 / 1750

页数：6

共 43 条

[1] FUNDAMENTAL AND PRACTICAL ASPECTS OF ALLOYING ENCAPSULATED GOLD-BASED CONTACTS TO GAAS
BARCZ, AJ
KAMINSKA, E
PIOTROWSKA, A
[J]. THIN SOLID FILMS, 1987, 149 (02) : 251 - 260
[2] Gold-Free Ternary III-V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer
Conesa-Boj, Sonia
Kriegner, Dominik
Han, Xiang-Lei
Plissard, Sebastien
Wallart, Xavier
Stangl, Julian
Fontcuberta i Morral, Anna
Caroff, Philippe
[J]. NANO LETTERS, 2014, 14 (01) : 326 - 332
[3] EQUILIBRIUM DIAGRAM OF SYSTEM GOLD-GALLIUM
COOKE, CJ
HUMEROTH.W
[J]. JOURNAL OF THE LESS-COMMON METALS, 1966, 10 (01): : 42 - &
[4] RADIATIVE RECOMBINATION MECHANISMS IN GAASP DIODES WITH AND WITHOUT NITROGEN DOPING
CRAFORD, MG
SHAW, RW
HERZOG, AH
GROVES, WO
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4075 - &
[5] A new understanding of au-assisted growth of III-V semiconductor nanowires
Dick, KA
Deppert, K
Karlsson, LS
Wallenberg, LR
Samuelson, L
Seifert, W
[J]. ADVANCED FUNCTIONAL MATERIALS, 2005, 15 (10) : 1603 - 1610
[6] Coaxial Multishell (In,Ga)As/GaAs Nanowires for Near-Infrared Emission on Si Substrates
Dimakis, Emmanouil
Jahn, Uwe
Ramsteiner, Manfred
Tahraoui, Abbes
Grandal, Javier
Kong, Xiang
Marquardt, Oliver
Trampert, Achim
Riechert, Henning
Geelhaar, Lutz
[J]. NANO LETTERS, 2014, 14 (05) : 2604 - 2609
[7] Single-nanowire electrically driven lasers
Duan, XF
Huang, Y
Agarwal, R
Lieber, CM
[J]. NATURE, 2003, 421 (6920) : 241 - 245
[8] THE KINETICS OF THE AU-INP INTERACTION
FATEMI, NS
WEIZER, VG
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (04) : 1934 - 1939
[9] Stacking faults in formation of silver nanodisks
Germain, V
Li, J
Ingert, D
Wang, ZL
Pileni, MP
[J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2003, 107 (34) : 8717 - 8720
[10] Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature
Guo, Nan
Hu, Weida
Liao, Lei
Yip, SenPo
Ho, Johnny C.
Miao, Jinshui
Zhang, Zhi
Zou, Jin
Jiang, Tao
Wu, Shiwei
Chen, Xiaoshuang
Lu, Wei
[J]. ADVANCED MATERIALS, 2014, 26 (48) : 8203 - 8209

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