High-pressure phase diagram of Bi2Sr2CaCu2O8+δ single crystals -: art. no. 214502

被引:34
作者
Chen, XJ
Struzhkin, VV
Hemley, RJ
Mao, HK
Kendziora, C
机构
[1] Carnegie Inst Sci, Geophys Lab, Washington, DC 20015 USA
[2] USN, Res Lab, Washington, DC 20375 USA
关键词
D O I
10.1103/PhysRevB.70.214502
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have investigated the pressure dependence of the superconducting transition temperature T-c up to 18 GPa of Bi2Sr2CaCu2O8+delta single crystals ranging from the highly underdoped through the nearly optimally doped to the highly overdoped level. For all three samples studied, T-c is found to increase initially and then saturate at some critical pressure P-c, but decrease modestly with further increasing pressure. Oxygen doping has a tendency to reduce the increase of T-c and P-c. A high-pressure phase diagram between the saturated T-c and P-c is then obtained. Theoretical interpretation is given by using the competition between the hole carrier density and pairing interaction strength based on the high-pressure transport data of the resistivity and Hall coefficient in this system.
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页码:1 / 7
页数:7
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