Indirect programming of floating-gate transistors

被引:31
|
作者
Graham, David W. [1 ]
Farquhar, Ethan
Degnan, Brian
Gordon, Christal
Hasler, Paul
机构
[1] W Virginia Univ, Lane Dept Comp Sci & Elect Engn, Morgantown, WV 26506 USA
[2] Univ Tennessee, Dept Elect & Comp Engn, Knoxville, TN 37916 USA
[3] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[4] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27607 USA
关键词
analog programmability; electron tunneling; floating-gate (FG) nFET; FG programming; FG transistor; hot-electron injection; indirect programming;
D O I
10.1109/TCSI.2007.895521
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Floating-gate (FG) transistors are useful for precisely programming a large array of current sources. Present FG programming techniques require disconnection of the transistor from the rest of its circuit while it is being programmed. We present a new method of programming FG transistors that, does not require this disconnection. In this indirect programming method, two transistors share a FG allowing one to exist directly in a circuit while the other is reserved for programming. Since the transistor does not need to be disconnected from the circuit to program it, the switch count is reduced, resulting in fewer parasitics and better overall performance. Additionally, the use of these indirectly programmed FG transistors allows a circuit to be tuned such that the effects of device mismatch are negated. Finally, the concept of run-time programming is introduced which allows a circuit to be recalibrated while it is still operating within its system.
引用
收藏
页码:951 / 963
页数:13
相关论文
共 50 条
  • [1] Indirect programming of floating-gate transistors
    Graham, DW
    Farquhar, E
    Degnan, B
    Gordon, C
    Hasler, P
    2005 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), VOLS 1-6, CONFERENCE PROCEEDINGS, 2005, : 2172 - 2175
  • [2] Run-time programming of analog circuits using floating-gate transistors
    Graham, David W.
    Hasler, Paul
    2007 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11, 2007, : 3816 - +
  • [3] Reducing Indirect Programming Mismatch due to Oxide-traps using Dual-channel Floating-gate Transistors
    Huang, Chenling
    Chakrabartty, Shantanu
    ISCAS: 2009 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-5, 2009, : 1783 - 1786
  • [4] Continuous-Time Programming of Floating-Gate Transistors for Nonvolatile Analog Memory Arrays
    Rumberg, Brandon
    Clites, Spencer
    Abulaiha, Haifa
    DiLello, Alexander
    Graham, David
    JOURNAL OF LOW POWER ELECTRONICS AND APPLICATIONS, 2021, 11 (01) : 1 - 21
  • [5] Accurate programming of analog floating-gate arrays
    Smith, PD
    Kucic, M
    Hasler, P
    2002 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL V, PROCEEDINGS, 2002, : 489 - 492
  • [6] FLOATING-GATE MOSFET WITH REDUCED PROGRAMMING VOLTAGE
    CHAI, YY
    JOHNSON, LG
    ELECTRONICS LETTERS, 1994, 30 (18) : 1536 - 1537
  • [7] A Regulated Charge Pump for Injecting Floating-Gate Transistors
    Navidi, Mir Mohammad
    Graham, David W.
    2017 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2017, : 2270 - 2273
  • [8] A simulation model for floating-gate MOS synapse transistors
    Rahimi, K
    Diorio, C
    Hernandez, C
    Brockhausen, MD
    2002 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL II, PROCEEDINGS, 2002, : 532 - 535
  • [9] IV CHARACTERISTICS OF FLOATING-GATE MOS-TRANSISTORS
    WANG, ST
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (09) : 1292 - 1294
  • [10] A novel serial multiplier using floating-gate transistors
    Sinencio, LFC
    Sanchez, AD
    Angulo, JR
    2004 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL 2, PROCEEDINGS, 2004, : 861 - 864