1.15-μm wavelength oxide-confined quantum-dot vertical-cavity surface-emitting laser

被引：54

作者：

Huffaker, DL ^{[1
]}

Deng, H ^{[1
]}

Deppe, DG ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 02期

关键词：

Fabry-Perot resonators; laser modes; laser resonators; semiconductor lasers; suface-emitting lasers;

D O I：

10.1109/68.655352

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-threshold lasing is achieved at 1.154 mu m for an oxide-confined quantum-dot (QD) vertical-cavity surface-emitting laser (VCSEL) grown on a GaAs substrate. The long wavelength emission is obtained through use of an InAs-GaAs QD active region, A continuous-wave (CW) threshold of 502 mu A is obtained for a device size of 10-mu m diameter, corresponding to a threshold current density of 640 A/cm(2).

引用

页码：185 / 187

页数：3

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