Effect of quantum well non-uniformities on lasing threshold, linewidth, and lateral near field filamentation in violet (Al, In)GaN laser diodes

被引：11

作者：

Jeschke, J. ^{[1
]}

Zeimer, U. ^{[1
]}

Redaelli, L. ^{[1
]}

Einfeldt, S. ^{[1
]}

Kneissl, M. ^{[1
,2
]}

Weyers, M. ^{[1
]}

机构：

[1] Leibniz Inst Hoechstfrequenztech, Ferdinand Braun Inst, D-12489 Berlin, Germany

[2] Tech Univ Berlin, Inst Solid State Phys, D-10623 Belin, Germany

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 17期

关键词：

SEMICONDUCTOR-LASERS; OPERATION; TIME; LEDS;

D O I：

10.1063/1.4899298

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lateral near field patterns and filamentation effects of gain guided broad area (Al, In) GaN-based laser diodes emitting around 415 nm have been investigated. Diodes from the same laser bar, which are close to each other, show nearly the same number and widths of filaments. Comparison of different bars, which are from the same wafer but further apart from each other, reveals that a higher number of filaments correlates with a higher laser threshold and broader spectral linewidth. Cathodoluminescence mappings at 80K show strong variations of the quantum well band gap and hence of the emission wavelength for the bars with strong filamentation. These observations confirm previous theoretical predictions stating that large band gap fluctuations increase the threshold current and spectral linewidth. Furthermore, filamentation is enhanced as well because of a reduction of the carrier diffusion length. (C) 2014 AIP Publishing LLC.

引用

页数：3

共 17 条

[1] STRAIN DEPENDENCE OF THRESHOLD CURRENT IN FIXED-WAVELENGTH GAINP LASER-DIODES [J].

BLOOD, P ;

SMOWTON, PM .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) :707-711

[2] Measurement and simulation of the lateral mode profile of broad ridge 405 nm (Al,In)GaN laser diodes [J].

Braun, Harald ;

Scholz, Dominik ;

Meyer, Tobias ;

Schwarz, Ulrich T. ;

Queren, Desiree ;

Schillgalies, Marc ;

Brueninghoff, Stefanie ;

Laubsch, Ansgar ;

Strauss, Uwe .

SEMICONDUCTOR LASERS AND LASER DYNAMICS III, 2008, 6997

[3] Spatially resolved cathodoluminescence spectra of InGaN quantum wells [J].

Chichibu, S ;

Wada, K ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1997, 71 (16) :2346-2348

[4] Microscopic theory of gain for an InGaN/AlGaN quantum well laser [J].

Chow, WW ;

Wright, AF ;

Girndt, A ;

Jahnke, F ;

Koch, SW .

APPLIED PHYSICS LETTERS, 1997, 71 (18) :2608-2610

[5] Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers [J].

Chow, WW ;

Amano, H ;

Akasaki, I .

APPLIED PHYSICS LETTERS, 2000, 76 (13) :1647-1649

[6] Analysis of lateral-mode behavior in broad-area InGaN quantum-well lasers [J].

Chow, WW ;

Amano, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (02) :265-273

[7] Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities [J].

Dai, Q. ;

Schubert, M. F. ;

Kim, M. H. ;

Kim, J. K. ;

Schubert, E. F. ;

Koleske, D. D. ;

Crawford, M. H. ;

Lee, S. R. ;

Fischer, A. J. ;

Thaler, G. ;

Banas, M. A. .

APPLIED PHYSICS LETTERS, 2009, 94 (11)

[8] High efficiency GaN-based LEDs and lasers on SiC [J].

Edmond, J ;

Abare, A ;

Bergman, M ;

Bharathan, J ;

Bunker, KL ;

Emerson, D ;

Haberern, K ;

Ibbetson, J ;

Leung, M ;

Russel, P ;

Slater, D .

JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) :242-250

[9] Maxwell-Bloch equations for spatially inhomogeneous semiconductor lasers .2. Spatiotemporal dynamics [J].

Hess, O ;

Kuhn, T .

PHYSICAL REVIEW A, 1996, 54 (04) :3360-3368

[10] The roles of structural imperfections in InGaN-Based blue light-emitting diodes and laser diodes [J].

Nakamura, S .

SCIENCE, 1998, 281 (5379) :956-961

← 1 2 →