Effects of Excitation Power and Temperature on Photoluminescence from Stacking Faults in 4H-SiC Epilayers

被引：7

作者：

Nakamura, Mitsutaka ^{[1
]}

Yoshimoto, Masahiro ^{[1
]}

机构：

[1] Kyoto Inst Technol, Dept Elect, Sakyo Ku, Kyoto 6068585, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 01期

关键词：

SILICON-CARBIDE; EPITAXIAL LAYER; DIODES; RECOMBINATION;

D O I：

10.1143/JJAP.49.010202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nondestructive characterization of stacking faults (SFs) in 4H-SiC epilayers was carried out by photoluminescence (PL) mapping to clarify the effects of excitation power and measurement temperature. The PL mapping pattern of in-grown SFs fades in above a certain excitation intensity (e. g., 8.2W/cm(2) in this study) because of the superlinear excitation power dependence of the PL emission of the SFs. Bar-shaped SFs were identified in PL mapping at low temperatures. The PL intensity of bar-shaped SFs decreases with increasing temperature with an activation energy of 53 meV. Possible mechanisms of the emission of the SFs are also discussed. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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